Optimization of MoSe2 formation for Cu(In,Ga)Se 2-based solar cells by using thin superficial molybdenum oxide barrier layers

Thin Solid Films

Volumn 545, Issue , 2013, Pages 94-99

  Duchatelet, A ^a   Savidand, G ^a   Vannier, R N ^b   Lincot, D ^a  

^a CNRS   (France)

^b UNITÉ DE CATALYSE ET DE CHIMIE DU SOLIDE   (France)

Author keywords

CIGS; Molybdenum oxide; MoSe2; Selenization; Solar cells

Indexed keywords

CIGS; CONTROLLED THICKNESS; METALLIC BEHAVIORS; MO SUBSTRATES; MOSE2; OXIDE BARRIER LAYERS; SELENIZATION; THERMAL OXIDATION;

GALLIUM; GALLIUM ALLOYS; MOLYBDENUM OXIDE; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS;

ELECTRIC PROPERTIES;

EID: 84884980247     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.07.038     Document Type: Article

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