High efficiency Cu2ZnSnSe4 solar cells with a TiN diffusion barrier on the molybdenum bottom contact

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 671-673

  Shin, Byungha ^a   Zhu, Yu ^a   Bojarczuk, Nestor A ^a   Chey, S Jay ^a   Guha, Supratik ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM CONTACTS; BOTTOM ELECTRODES; CU2ZNSNS4; DEVICE PERFORMANCE; GLASS SUBSTRATES; REACTION LAYERS; THIN TIN; VACUUM DEPOSITION PROCESS;

DIFFUSION BARRIERS; MOLYBDENUM; SOLAR CELLS; SUBSTRATES; TITANIUM NITRIDE;

EFFICIENCY;

EID: 84869468617     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317698     Document Type: Conference Paper

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