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Volumn 28, Issue 10, 2013, Pages

Effect of anodization current density on pore geometry in macroporous silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANODIZATION CURRENT; IMAGE PROCESSING ALGORITHM; MACRO POROUS SILICON; MACROPORE FORMATION; MACROPORES; PORE DIAMETERS; PORE GEOMETRY; SQUARE-ROOT DEPENDENCE;

EID: 84884880780     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/10/105027     Document Type: Article
Times cited : (15)

References (17)
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  • 7
    • 0000744765 scopus 로고
    • Etch channel formation during anodic dissolution of n-type silicon in aqueous hydrofluoric acid
    • 10.1149/1.2404201 0013-4651
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    • (1972) J. Electrochem. Soc. , vol.119 , pp. 351
    • Theunissen, M.J.J.1
  • 8
    • 0027677480 scopus 로고
    • The physics of macropore formation in low doped n-type silicon
    • 10.1149/1.2220919 0013-4651
    • Lehmann V 1993 The physics of macropore formation in low doped n-type silicon J. Electrochem. Soc. 140 2836-43
    • (1993) J. Electrochem. Soc. , vol.140 , pp. 2836-2843
    • Lehmann, V.1
  • 10
    • 1642435694 scopus 로고    scopus 로고
    • Macropore formation on medium doped p-type silicon
    • DOI 10.1002/1521-396X(200011)182:1<17::AID-PSSA17>3.0.CO;2-0
    • Lust S and Lévy-Clément C 2000 Macropore formation on medium doped p-type silicon Phys. Status Solidi a 182 17-21 (Pubitemid 32871478)
    • (2000) Physica Status Solidi (A) Applied Research , vol.182 , Issue.1 , pp. 17-21
    • Lust, S.1    Levy-Clement, C.2
  • 11
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    • DOI 10.1149/1.1475688
    • Lust S and Lévy-Clément C 2002 Chemical limitations of macropore formation on medium-doped p-type silicon J. Electrochem. Soc. 149 C338-44 (Pubitemid 34697441)
    • (2002) Journal of the Electrochemical Society , vol.149 , Issue.6
    • Lust, S.1    Levy-Clement, C.2
  • 13
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    • The physics of macropore formation in low doped p type silicon
    • 10.1149/1.1392037 0013-4651
    • Lehmann V and Rönnebeck S 1999 The physics of macropore formation in low doped p type silicon J. Electrochem. Soc. 146 2968
    • (1999) J. Electrochem. Soc. , vol.146 , pp. 2968
    • Lehmann, V.1    Rönnebeck, S.2
  • 16
    • 0028419503 scopus 로고
    • The electrochemical oxidation of silicon and formation of porous silicon in acetonitrile
    • 10.1149/1.2054832 0013-4651
    • Propst E K and Kohl P A 1994 The electrochemical oxidation of silicon and formation of porous silicon in acetonitrile J. Electrochem. Soc. 141 1006-13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.