Interferometric thickness calibration of 300 mm silicon wafers

Proceedings - ASPE Summer Topical Meeting on Precision Interferometric Metrology, ASPE 2005

Volumn 36, Issue , 2005, Pages 63-67

  Wang, Quandou ^a   Griesmann, Ulf ^a   Polvani, Robert ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

300 mm silicon wafers; Infrared interferometer; Inteferometry; Wafer thickness; Wafer thickness variation (TTV)

Indexed keywords

300-MM SILICON WAFERS; INFRARED INTERFEROMETERS; INTEFEROMETRY; MEASUREMENT UNCERTAINTY; NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY; OPTICAL THICKNESS; THICKNESS VARIATION; WAFER THICKNESS;

INTERFEROMETERS; INTERFEROMETRY; REFRACTIVE INDEX; SILICON; THICKNESS MEASUREMENT; UNCERTAINTY ANALYSIS; UNITS OF MEASUREMENT;

SILICON WAFERS;

EID: 84884618094     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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