Silicon wafer thickness variation measurements using the National Institute of Standards and Technology infrared interferometer

Optical Engineering

Volumn 42, Issue 8, 2003, Pages 2281-2290

  Schmitz, Tony L ^a   Davies, Angela ^a,c   Evans, Chris J ^a,d   Parks, Robert E ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Optical Perspectives Group LLC   (United States)

^c UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

^d ZYGO CORPORATION   (United States)

Author keywords

Interferometry; Lithography; Silicon wafer; Thickness variation

Indexed keywords

CAPACITANCE; INTERFEROMETERS; PHOTOLITHOGRAPHY; REFLECTION; SILICON WAFERS; SURFACE MEASUREMENT; SURFACES; THICKNESS MEASUREMENT;

CAPACITANCE GAGE BASED INSTRUMENT; INFRARED INTERFEROMETER; INFRARED SOURCE; THICKNESS VARIATION MEASUREMENTS; VIDICON DETECTOR;

INFRARED DEVICES;

EID: 0141518290     PISSN: 00913286     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1589757     Document Type: Article

References (10)

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