-
1
-
-
4344670043
-
Passive-Oxidation Kinetics of SiC Microparticles
-
D. Das, J. Farjas, and, P. Roura, " Passive-Oxidation Kinetics of SiC Microparticles," J. Am. Ceram. Soc., 87 [7] 1301-5 (2004).
-
(2004)
J. Am. Ceram. Soc.
, vol.87
, Issue.7
, pp. 1301-1305
-
-
Das, D.1
Farjas, J.2
Roura, P.3
-
2
-
-
0028403925
-
Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen
-
E. J. Opila, " Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen," J. Am. Ceram. Soc., 77 [3] 730-6 (1994).
-
(1994)
J. Am. Ceram. Soc.
, vol.77
, Issue.3
, pp. 730-736
-
-
Opila, E.J.1
-
3
-
-
0036687437
-
Thermal Shock Behavior of Porous Silicon Carbide Ceramics
-
J. H. She, T. Ohji, and, Z. Y. Deng, " Thermal Shock Behavior of Porous Silicon Carbide Ceramics," J. Am. Ceram. Soc., 85 [8] 2125-7 (2002).
-
(2002)
J. Am. Ceram. Soc.
, vol.85
, Issue.8
, pp. 2125-2127
-
-
She, J.H.1
Ohji, T.2
Deng, Z.Y.3
-
4
-
-
49549106399
-
Preparation and Characterization of Aluminum-Doped Silicon Carbide by Combustion Synthesis
-
Z. Li, W. Zhou, X. Su, F. Luo, D. Zhu, and, P. Liu, " Preparation and Characterization of Aluminum-Doped Silicon Carbide by Combustion Synthesis," J. Am. Ceram. Soc., 91 [8] 2607-10 (2008).
-
(2008)
J. Am. Ceram. Soc.
, vol.91
, Issue.8
, pp. 2607-2610
-
-
Li, Z.1
Zhou, W.2
Su, X.3
Luo, F.4
Zhu, D.5
Liu, P.6
-
5
-
-
0036132917
-
Nanometer Silicon Carbide Powder Synthesis and its Dielectric Behavior in the GHz Range
-
B. Zhang, J. Li, J. Sun, S. Zhang, H. Zhai, and, Z. Du, " Nanometer Silicon Carbide Powder Synthesis and its Dielectric Behavior in the GHz Range," J. Eur. Ceram. Soc., 22 [1] 93-9 (2002).
-
(2002)
J. Eur. Ceram. Soc.
, vol.22
, Issue.1
, pp. 93-99
-
-
Zhang, B.1
Li, J.2
Sun, J.3
Zhang, S.4
Zhai, H.5
Du, Z.6
-
6
-
-
79955523611
-
Production of Ni-Doped SiC Nanopowders and Their Dielectric Properties
-
D. Li, H. B. Jin, M. S. Cao, T. Chen, Y. K. Dou, B. Wen, and, S. Agathopoulos, " Production of Ni-Doped SiC Nanopowders and Their Dielectric Properties," J. Am. Ceram. Soc., 94 [5] 1523-7 (2011).
-
(2011)
J. Am. Ceram. Soc.
, vol.94
, Issue.5
, pp. 1523-1527
-
-
Li, D.1
Jin, H.B.2
Cao, M.S.3
Chen, T.4
Dou, Y.K.5
Wen, B.6
Agathopoulos, S.7
-
7
-
-
69649095426
-
Dielectric Property of Aluminum-Doped SiC Powder by Solid-State Reaction
-
Z. Li, W. Zhou, X. Su, Y. Huang, G. Li, and, Y. Wang, " Dielectric Property of Aluminum-Doped SiC Powder by Solid-State Reaction," J. Am. Ceram. Soc., 92 [9] 2116-8 (2009).
-
(2009)
J. Am. Ceram. Soc.
, vol.92
, Issue.9
, pp. 2116-2118
-
-
Li, Z.1
Zhou, W.2
Su, X.3
Huang, Y.4
Li, G.5
Wang, Y.6
-
8
-
-
84874661907
-
Preparation and Microwave Absorption Properties of Fe-Doped SiC Powder Obtained by Combustion Synthesis
-
X. Su, Y. Jia, J. Wang, J. Xu, X. He, C. Fu, and, S. Liu, " Preparation and Microwave Absorption Properties of Fe-Doped SiC Powder Obtained by Combustion Synthesis," Ceram. Int., 39 [4] 3651-6 (2013).
-
(2013)
Ceram. Int.
, vol.39
, Issue.4
, pp. 3651-3656
-
-
Su, X.1
Jia, Y.2
Wang, J.3
Xu, J.4
He, X.5
Fu, C.6
Liu, S.7
-
9
-
-
79959329221
-
A Method to Adjust Dielectric Property of SiC Powder in the GHz Range
-
X. Su, J. Xu, Z. Li, J. Wang, X. He, C. Fu, and, W. Zhou, " A Method to Adjust Dielectric Property of SiC Powder in the GHz Range," J. Mater. Sci. Technol., 27 [5] 421-5 (2011).
-
(2011)
J. Mater. Sci. Technol.
, vol.27
, Issue.5
, pp. 421-425
-
-
Su, X.1
Xu, J.2
Li, Z.3
Wang, J.4
He, X.5
Fu, C.6
Zhou, W.7
-
10
-
-
79960233886
-
Dielectric Properties of SiC Nanowires with Different Chemical Compositions
-
A. Jänis, Y. Yiming, and, U. Klement, " Dielectric Properties of SiC Nanowires with Different Chemical Compositions," IEEE Trans. Nanotechnol., 10 [4] 751-6 (2011).
-
(2011)
IEEE Trans. Nanotechnol.
, vol.10
, Issue.4
, pp. 751-756
-
-
Jänis, A.1
Yiming, Y.2
Klement, U.3
-
11
-
-
75749156294
-
High Electromagnetic Wave Absorption Performance of Silicon Carbide Nanowires in the Gigahertz Range
-
S. C. Chiu, H. C. Yu, and, Y. Y. Li, " High Electromagnetic Wave Absorption Performance of Silicon Carbide Nanowires in the Gigahertz Range," J. Phys. Chem. C, 114 [4] 1947-52 (2010).
-
(2010)
J. Phys. Chem. C
, vol.114
, Issue.4
, pp. 1947-1952
-
-
Chiu, S.C.1
Yu, H.C.2
Li, Y.Y.3
-
12
-
-
0029271620
-
Effect of Stacking Faults on the X-ray Diffraction Profiles of β-SiC Powders
-
V. V. Pujar, and, J. D. Cawley, " Effect of Stacking Faults on the X-ray Diffraction Profiles of β-SiC Powders," J. Am. Ceram. Soc., 78 [3] 774-82 (1995).
-
(1995)
J. Am. Ceram. Soc.
, vol.78
, Issue.3
, pp. 774-782
-
-
Pujar, V.V.1
Cawley, J.D.2
-
13
-
-
0026626385
-
Synthesis and Characterization of SiC Whiskers
-
L. Wang, H. Wada, and, L. Allard, " Synthesis and Characterization of SiC Whiskers," J. Mat. Res., 7 [1] 148-63 (1992).
-
(1992)
J. Mat. Res.
, vol.7
, Issue.1
, pp. 148-163
-
-
Wang, L.1
Wada, H.2
Allard, L.3
-
14
-
-
0034460112
-
Stacking Faults in Silicon Carbide Whiskers
-
H. J. Choi, and, J. G. Lee, " Stacking Faults in Silicon Carbide Whiskers," Ceram. Int., 26 [1] 7-12 (2000).
-
(2000)
Ceram. Int.
, vol.26
, Issue.1
, pp. 7-12
-
-
Choi, H.J.1
Lee, J.G.2
-
16
-
-
0037533690
-
Stacking Faults in 3C-,4H-, and 6H-SiC Polytypes Investigated by an ab Initio Supercell Method
-
[], 12
-
U. Lindefelt, H. Iwata, S. Öberg, and, P. R. Briddon, " Stacking Faults in 3C-,4H-, and 6H-SiC Polytypes Investigated by an ab Initio Supercell Method," Phys. Rev. B, 67 [15] 155204, 12pp (2003).
-
(2003)
Phys. Rev. B
, vol.67
, Issue.15
, pp. 155204
-
-
Lindefelt, U.1
Iwata, H.2
Öberg, S.3
Briddon, P.R.4
-
17
-
-
0037122091
-
Theoretical Study of Planar Defects in Silicon Carbide
-
I. Hisaomi, L. Ulf, Ö. Sven, and, R. B. Patrick, " Theoretical Study of Planar Defects in Silicon Carbide," J. Phys.: Condens. Matter, 14 [48] 12733-40 (2002).
-
(2002)
J. Phys.: Condens. Matter
, vol.14
, Issue.48
, pp. 12733-12740
-
-
Hisaomi, I.1
Ulf, L.2
Sven, Ö.3
Patrick, R.B.4
-
18
-
-
0347764791
-
Stacking Faults in Silicon Carbide
-
H. P. Iwata, U. Lindefelt, S. Öberg, and, P. R. Briddon, " Stacking Faults in Silicon Carbide," Phys. B, 340-342 [0] 165-70 (2003).
-
(2003)
Phys. B
, vol.340-342
, Issue.0
, pp. 165-170
-
-
Iwata, H.P.1
Lindefelt, U.2
Öberg, S.3
Briddon, P.R.4
-
19
-
-
70149108700
-
12 Material: An Approach for the Origin of the Huge Dielectric Constant and Semiconducting Coexistent Features
-
[], 9
-
12 Material: An Approach for the Origin of the Huge Dielectric Constant and Semiconducting Coexistent Features," J. Phys. D: Appl. Phys., 42 [5] 055404, 9pp (2009).
-
(2009)
J. Phys. D: Appl. Phys.
, vol.42
, Issue.5
, pp. 055404
-
-
Bueno, P.R.1
Tararan, R.2
Parra, R.3
Joanni, E.4
Ramírez, M.A.5
Ribeiro, W.C.6
Longo, E.7
Varela, J.A.8
-
20
-
-
0024135605
-
Quantitative Analysis of Stacking Faults in the Structure of SiC by X-ray Powder Profile Refinement Method
-
H. Tateyama, N. Sutoh, and, N. Murukawa, " Quantitative Analysis of Stacking Faults in the Structure of SiC by X-ray Powder Profile Refinement Method," J. Ceram. Soc. Jpn., 96 [10] 1003-11 (1988).
-
(1988)
J. Ceram. Soc. Jpn.
, vol.96
, Issue.10
, pp. 1003-1011
-
-
Tateyama, H.1
Sutoh, N.2
Murukawa, N.3
|