Temperature-induced coexistence of a conducting bilayer and the bulk-terminated surface of the topological insulator Bi2Te 3

Nano Letters

Volumn 13, Issue 9, 2013, Pages 4517-4521

  Coelho, Paula M ^a   Ribeiro, Guilherme A S ^a   Malachias, Angelo ^a   Pimentel, Vinicius L ^b   Silva, Wendell S ^a   Reis, Diogo D ^a   Mazzoni, Mario S C ^a   Magalhães Paniago, Rogerio ^a  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b BRAZILIAN CENTER FOR RESEARCH IN ENERGY AND MATERIALS CNPEM   (Brazil)

Author keywords

2D crystals; electronic properties; scanning tunneling microscopy; surface structure; Topological insulators; X ray diffraction

Indexed keywords

2-D CRYSTALS; ELECTRONIC BEHAVIORS; STRUCTURAL MODIFICATIONS; SURFACE CONDUCTING; SURFACE TERMINATION; TEMPERATURE-INDUCED; TOPOLOGICAL INSULATORS; TWO-DIMENSIONAL GAS;

ELECTRIC INSULATORS; ELECTRONIC PROPERTIES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SURFACE STRUCTURE; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

SURFACES;

EID: 84884263787     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl402450b     Document Type: Article

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