Stabilization of semiconductor surfaces through bulk dopants

New Journal of Physics

Volumn 15, Issue , 2013, Pages

  Moll, Nikolaj ^a,b   Xu, Yong ^a   Hofmann, Oliver T ^a   Rinke, Patrick ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND PRESSURE; CRUCIAL PARAMETERS; DEFECT-FREE SURFACES; DENSITY-FUNCTIONAL THEORY CALCULATIONS; HIGH VACUUM PRESSURE; HYBRID FUNCTIONAL; SEMI-CONDUCTOR SURFACES; ZNO SURFACE;

HYDROGEN; MONOLAYERS;

ZINC OXIDE;

EID: 84883386947     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/15/8/083009     Document Type: Article

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