Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor

Applied Physics Letters

Volumn 103, Issue 8, 2013, Pages

  Hung, S C ^a   Woon, W Y ^a   Lan, S M ^b   Ren, F ^c   Pearton, S J ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CARBON MONOXIDE SENSOR; CO CONCENTRATIONS; LIMIT OF DETECTION; PERFECT CRYSTALS; ROOM TEMPERATURE; SOURCE-DRAIN CURRENT; ZINC OXIDE NANOWIRES;

CARBON MONOXIDE; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; NANOWIRES; SENSORS; ZINC OXIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84883382972     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818671     Document Type: Article

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