Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system

Journal of Applied Physics

Volumn 114, Issue 7, 2013, Pages

  Benz, Felix ^a,c   Strunk, Horst P ^a   Schaab, Jakob ^a,d   Künecke, Ulrike ^b   Wellmann, Peter ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CROSS-RELAXATION PROCESS; DOPED SEMICONDUCTORS; EXCITATION INTENSITY; LUMINESCENCE INTENSITY; SINGLE SPECIMEN; TERBIUM IONS;

ENERGY TRANSFER; GROUND STATE; IONS; LIGHT; LUMINESCENCE; RELAXATION PROCESSES;

TERBIUM;

EID: 84883292900     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818815     Document Type: Article

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