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Volumn 29, Issue 2, 2014, Pages 906-919

Characterization of 6.5 kV IGBTs for high-power medium-frequency soft-switched applications

Author keywords

Insulated gate bipolar transistor (IGBT); resonant converter; soft switching

Indexed keywords

GALVANIC ISOLATION; HIGH POWER APPLICATIONS; HIGH-VOLTAGE SEMICONDUCTORS; LLC RESONANT CONVERTER; LOW SWITCHING FREQUENCY; RESONANT CONVERTERS; SOFT-SWITCHING TECHNIQUE; SWITCHING PROPERTIES;

EID: 84883212090     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2259264     Document Type: Article
Times cited : (88)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.