Mechanism of AlGaN/GaN heterostructure field-effect transistor threshold voltage shift by illumination

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 1, 2008, Pages 2103-2107

  Okada, Masaya ^a   Ito, Hideki ^a   Ao, Jin Ping ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AIGaN GaN HFET; Deep trap; Illumination; Spectrum dependency; SRH statistics; Threshold voltage

Indexed keywords

BUFFER LAYERS; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; EPITAXIAL LAYERS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; OPTICAL WAVEGUIDES; STATISTICAL METHODS; TRANSISTORS;

AIGAN/GAN HFET; DEEP TRAP; ILLUMINATION; SPECTRUM DEPENDENCY; SRH STATISTICS;

THRESHOLD VOLTAGE;

EID: 54249157022     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2103     Document Type: Article

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