Development and characterization of high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells

IEEE Transactions on Electron Devices

Volumn 46, Issue 10, 1999, Pages 2116-2125

  Karam, Nasser H ^a,b   King, Richard R ^a   Terence Cavicchi, B ^a   Krut, Dimitri D ^a   Ermer, James H ^a   Haddad, Moran ^a   Cai, Li ^a   Joslin, David E ^a   Takahashi, Mark ^a   Eldredge, Jack W ^a   Nishikawa, Warren T ^a   Lillington, David R ^a   Keyes, Brian M ^a   Ahrenkiel, Richard K ^a  

^a Spectrolab Inc   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING GERMANIUM;

DUAL JUNCTION SOLAR CELLS; GALLIUM INDIUM PHOSPHIDE; TRIPLE JUNCTION SOLAR CELLS;

SOLAR CELLS;

EID: 0033323711     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.792006     Document Type: Article

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