Exciton fate in semiconductor nanocrystals at elevated temperatures: Hole trapping outcompetes exciton deactivation

Journal of Physical Chemistry C

Volumn 117, Issue 33, 2013, Pages 17337-17343

  Rowland, Clare E ^a   Schaller, Richard D ^a,b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELEVATED TEMPERATURE; SEMICONDUCTOR NANOCRYSTALS; SOLAR CONCENTRATION; SPECTROSCOPIC TECHNIQUE; TEMPERATURE ELEVATION; TIME-CORRELATED SINGLE PHOTON COUNTING; TRANSIENT ABSORPTION; ULTRAFAST MEASUREMENTS;

HOLE TRAPS; LIGHT EMITTING DIODES; NANOCRYSTALS; SOLAR POWER GENERATION;

EXCITONS;

EID: 84883143050     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp405616u     Document Type: Article

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