Deposition of CIGS films by hydrazine-free solution method

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 8, 2013, Pages 1636-1640

  Zhou, Wen Hui ^a   Li, Peng Wei ^a   Jiao, Jie ^a   Hou, Ze Liang ^a   Zhou, Zheng Ji ^a   Wu, Si Xin ^a  

^a HENAN UNIVERSITY   (China)

Author keywords

copper indium gallium diselenide; hydrazine free; photovoltaics; solution method

Indexed keywords

APPLICATION PROSPECT; COPPER INDIUM GALLIUM DISELENIDE; HYDRAZINE-FREE; NITROGEN ATMOSPHERES; PHOTOVOLTAICS; PRECURSOR SOLUTIONS; SOLUTION METHODS; TRIETHYLENETETRAMINE;

COPPER; COSTS; CRYSTAL STRUCTURE; DEPOSITION; GALLIUM; HYDRAZINE; INDIUM; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS;

FILM PREPARATION;

EID: 84882454029     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201329148     Document Type: Article

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