Deep centers in a CuInGaSe 2/CdS/ZnO:B solar cell

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 6, 2012, Pages 1192-1197

  Choi, In Hwan ^a   Choi, Chul Hwan ^b   Lee, Joo Won ^b  

^a Chung Ang University   (South Korea)

^b LG Innotek Co Ltd   (South Korea)

Author keywords

CIGS solar cells; deep centers; deep level transient spectroscopy; electron beam induced currents

Indexed keywords

ABSORBER LAYERS; CAPACITANCE VOLTAGE MEASUREMENTS; CIGS SOLAR CELLS; CUINGASE; DEEP CENTERS; DEFECT CENTERS; DEFECT CONCENTRATIONS; DEFECT DISTRIBUTION; ELECTRON-BEAM-INDUCED CURRENT; HETEROJUNCTION SOLAR CELLS; SCHOTTKY JUNCTIONS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; HOLE TRAPS;

HETEROJUNCTIONS;

EID: 84862190767     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127596     Document Type: Article

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