Effects of grain-boundary potential barrier height and its fluctuation on conductivity of polycrystalline semiconductors in the ionized-impurity- scattering dominated case

Journal of Applied Physics

Volumn 114, Issue 4, 2013, Pages

  Kajikawa, Y ^a  

^a SHIMANE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MODELING; ELECTRICAL CONDUCTIVITY; GRAIN-BOUNDARY BARRIERS; IONIZED IMPURITIES; POLY-CRYSTALLINE SEMICONDUCTORS; POLYCRYSTALLINE SAMPLES; POTENTIAL BARRIER HEIGHT; STANDARD DEVIATION;

AMORPHOUS SEMICONDUCTORS; ARRHENIUS PLOTS; CURVE FITTING; IONIZATION; NUCLEAR PHYSICS; SCATTERING; THERMIONIC EMISSION;

IMPURITIES;

EID: 84882394097     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816795     Document Type: Article

References (39)

1. C. H. Ling, J. H. Fisher, and J. C. Anderson, Thin Solid Films 14, 267 (1972). 10.1016/0040-6090(72)90428-2
2. D. J. Thomson and H. C. Card, J. Appl. Phys. 54, 1976 (1983). 10.1063/1.332210
3. J. H. Werner, Solid State Phenom. 37-38, 213 (1994). 10.4028/www. scientific.net/SSP.37-38.213
4. Y. Kajikawa, J. Appl. Phys. 112, 123713 (2012). 10.1063/1.4770452
5. Y. Kajikawa, K. Okamura, Y. Inoko, and H. Mizuki, J. Appl. Phys. 112, 123712 (2012). 10.1063/1.4770417
6. T. Pisarkiewicz, K. Zakrzewska, and E. Leja, Thin Solid Films 174, 217 (1989). 10.1016/0040-6090(89)90892-4
7. D. M. Rowe and G. Min, in Proceedings of the 13th International Conference on Thermoelectrics (AIP New York, 1995), pp. 339-342.
8. K. Kishimoto, M. Tsukamoto, and T. Koyanagi, J. Appl. Phys. 92, 5331 (2002). 10.1063/1.1512964
9. J. Kołodziejczak, Acta phys. Polon. 20, 289 (1961).
10. Y. Nishio and T. Hirano, Jpn. J. Appl. Phys. Part 1 36, 170 (1997). 10.1143/JJAP.36.170
11. H. Anno, T. Sakakibara, Y. Notohata, H. Tashiro, T. Koyanagi, H. Kaneko, and K. Matsubara, in Proceedings of the 16th International Conference on Thermoelectrics, Catalog No. 97th 8291 (IEEE, Dresden, Germany, 1997), pp. 338-342.
12. N. Hamadadou, A. Khelil, and J. C. Bernede, Mater. Chem. Phys. 78, 591 (2003). 10.1016/S0254-0584(01)00577-6
13. G. Willeke, R. Dasbach, B. Sailer, and E. Bucher, Thin Solid Films 213, 271 (1992). 10.1016/0040-6090(92)90293-K
14. J. Oertel, K. Ellmer, W. Bohne, J. Röhrich, and H. Tributsch, J. Cryst. Growth 198/199, 1205 (1999). 10.1016/S0022-0248(98)01074-4
15. M. Regragui, V. Jousseaume, M. Addou, A. Outzourhit, J. C. Bernede, and B. El Idrissi, Thin Solid Films 397, 238 (2001). 10.1016/S0040-6090(01)01405-5
16. E. Shanthi, V. Dutta, A. Banerjee, and K. L. Chopra, J. Appl. Phys. 51, 6243 (1980). 10.1063/1.327610
17. A. P. Roth and D. F. Williams, J. Appl. Phys. 52, 6685 (1981). 10.1063/1.328618
18. D. Bednarczyk and J. Bednarczyk, Thin Solid Films 59, 279 (1979). 10.1016/0040-6090(79)90437-1
19. H. Haitjema, J. J. P. Elich, and C. J. Hoogendoorn, Sol. Energy Mater. 18, 283 (1989). 10.1016/0165-1633(89)90043-9
20. J. Bruneaux, H. Cachet, M. Froment, and A. Messad, Thin Solid Films 197, 129 (1991). 10.1016/0040-6090(91)90226-N
21. T. Minami, H. Sato, K. Ohashi, T. Tomofuji, and S. Takata, J. Cryst. Growth 117, 370 (1992). 10.1016/0022-0248(92)90778-H
22. T. Minami, S. Suzuki, and T. Miyata, Mater. Res. Soc. Symp. Proc. 666, F1.3.1 (2001). 10.1557/PROC-666-F1.3
23. K. Ellmer and G. Vollweiler, Thin Solid Films 496, 104 (2006). 10.1016/j.tsf.2005.08.269
24. J. Steinhauser, S. Faÿ, N. Oliveira, E. Vallat-Sauvain, and C. Ballif, Appl. Phys. Lett. 90, 142107 (2007). 10.1063/1.2719158
25. K. Ellmer and R. Mientus, Thin Solid Films 516, 4620 (2008). 10.1016/j.tsf.2007.05.084
26. S. Brehme, F. Fenske, W. Fuhs, E. Nebauer, M. Poschenreider, B. Selle, and I. Sieber, Thin Solid Films 342, 167 (1999). 10.1016/S0040-6090(98)01490-4
27. T. Tsurumi, S. Nishizawa, N. Ohashi, and T. Ohgaki, Jpn. J. Appl. Phys. Part 1 38, 3682 (1999). 10.1143/JJAP.38.3682
28. D. H. Zhang, T. L. Yang, Q. P. Wang, and D. J. Zhang, Mater. Chem. Phys. 68, 233 (2001). 10.1016/S0254-0584(00)00359-X
29. M. Kon, P. K. Song, Y. Shigesato, P. Frach, S. Ohno, and K. Suzuki, Jpn. J. Appl. Phys. 42, 263 (2003). 10.1143/JJAP.42.263
30. K. Ellmer and R. Mientus, Thin Solid Films 516, 5829 (2008). 10.1016/j.tsf.2007.10.082
31. R. Lipperheide, T. Weis, and U. Wille, J. Phys.: Condens. Matter 13, 3347 (2001). 10.1088/0953-8984/13/14/309
32. A. Bikowski and K. Ellmer, J. Mater. Res. 27, 2249 (2012). 10.1557/jmr.2012.113
33. S. Wolfram, The Mathematica Book, 3rd ed. (Cambridge University Press, 1996), Sec. 3.2.10.
34. E. H. Putley, The Hall Effect and Related Phenomena (Butterworth, London, 1960), p. 146.
35. W. Zawadzki, Phys. Status Solidi 2, 385 (1962). 10.1002/pssb.19620020404
36. P. P. Altermatt, T. Kiesewetter, K. Ellmer, and H. Tributsch, Sol. Energy Mater. Sol. Cells 71, 181 (2002). 10.1016/S0927-0248(01)00053-8
37. D. E. Husk and M. S. Seehra, Solid State Commun. 27, 1147 (1978). 10.1016/0038-1098(78)91130-4
38. A. M. Karguppikar and A. G. Vedeshwar, Phys. Status Solidi A 95, 717 (1986). 10.1002/pssa.2210950242
39. J. B. Goodenough, in Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology-New Series, Group III; Vol. 17, Pt. g, edited by, O. Madelung, (Springer-Verlag, Berlin, 1984).