Nb2O5 nanofiber memristor

Applied Physics Letters

Volumn 103, Issue 5, 2013, Pages

  Grishin, A M ^a,b   Velichko, A A ^c   Jalalian, A ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b INMATECH Intelligent Materials Technology   (Sweden)

^c PETROZAVODSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSPINNING TECHNIQUES; HIGH RESISTIVE STATE; IV CHARACTERISTICS; POOLE-FRENKEL EMISSION; RESISTIVE SWITCHING; SPREADING RESISTANCE; THERMODYNAMIC MODEL; THRESHOLD CHARACTERS;

ATOMIC FORCE MICROSCOPY; NANOFIBERS; OXYGEN VACANCIES; PLATINUM; SINTERING; SOL-GELS;

NIOBIUM OXIDE;

EID: 84882300094     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817302     Document Type: Article

References (31)

1. H. Yan, H. S. Choe, S. W. Nam, Y. Hu, S. Das, J. F. Klemic, J. C. Ellenbogen, and C. M. Lieber, Nature (London) 470, 240 (2011); 10.1038/nature09749
2. R. Yan, D. Gargas, and P. Yang, Nat. Photonics 3, 569 (2009); 10.1038/nphoton.2009.184
3. T. Palacios, Nature (London) 481, 152 (2012). 10.1038/481152a
4. A. Formhals, U.S. patent 1,975,504 (2 October 1934).
5. Yu. Dzenis, Science 304, 1917 (2004); 10.1126/science.1099074
6. N. Tucker, J. J. Stanger, M. P. Staiger, H. Razzaq, and K. Hofman, " The history of the science and technology of electrospinning from 1600 to 1995.," J. Eng. Fibers Fabrics Special Issue-Fibers 7, 63-73 (2012).
7. H. Wu, R. Zhang, X. Liu, D. Lin, and W. Pan, Chem. Mater. 19, 3506 (2007). 10.1021/cm070280i
8. H. Wang, Y. Li, L. Sun, Y. Li, W. Wang, S. Wang, S. Xu, and Q. Yang, J. Colloid Interface Sci. 350, 396 (2010). 10.1016/j.jcis.2010.06.068
9. S. H. Xie, J. Y. Li, Y. Qiao, Y. Y. Liu, L. N. Lan, Y. C. Zhou, and S. T. Tan, Appl. Phys. Lett. 92, 062901 (2008). 10.1063/1.2837185
10. Y.-W. Ju, J.-H. Park, H.-R. Jung, S.-J. Cho, and W.-J. Lee, Compos. Sci. Technol. 68, 1704 (2008); 10.1016/j.compscitech.2008.02.015
11. W. Ponhan and S. Maensiri, Solid State Sci. 11, 479 (2009); 10.1016/j.solidstatesciences.2008.06.019
12. D. Li, T. Herricks, and Y. Xia, Appl. Phys. Lett. 83, 4586 (2003); 10.1063/1.1630844
13. X.-W. Zhang, J. Cryst. Growth 310, 3235 (2008). 10.1016/j.jcrysgro.2008. 04.004
14. A. Jalalian, M. S. Kavrik, S. I. Khartsev, and A. M. Grishin, Appl. Phys. Lett. 99, 102501 (2011). 10.1063/1.3633351
15. A. Jalalian and A. M. Grishin, Appl. Phys. Lett. 100, 012904 (2012). 10.1063/1.3673282
16. W. R. Hiatt and T. W. Hickmott, Appl. Phys. Lett. 6, 106 (1965). 10.1063/1.1754187
17. T. V. Kundozerova, A. M. Grishin, G. B. Stefanovich, and A. A. Velichko, IEEE Trans. Electron Devices 59, 1144 (2012). 10.1109/TED.2011.2182515
18. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
19. JCPDS-International Center for Diffraction Data, Card No. 30-0873.
20. J. L. Waring, R. S. Roth, and H. S. Parker, J. Res. Natl. Bur. Stand. 77A (6), 705 (1973). 10.6028/jres.077A.042
21. S. Xie, E. Iglesia, and A. T. Bell, J. Phys. Chem. B 105, 5144 (2001). 10.1021/jp004434s
22. S. Tamura, K. Kato, and N. Goto, Z. Anorg. Allg. Chem. 410, 313 (1974); 10.1002/zaac.v410:3
23. K. Kato and S. Tamura, Acta Crystallogr. B 31, 673 (1975). 10.1107/S0567740875003603
24. J.-M. Jehng and I. E. Wachs, Chem. Mater. 3, 100 (1991). 10.1021/cm00013a025
25. A. Sawa, Mater. Today 11 (6), 28 (2008). 10.1016/S1369-7021(08)70119-6
26. J. Frenkel, Phys. Rev. 54, 647 (1938); 10.1103/PhysRev.54.647
27. S. M. Sze, Physics of Semiconductor Devices (John Wiley Sons, 1981).
28. L. D. Landau and E. M. Lifshits, Statistical Physics (Pergamon Press, Oxford, 1980).
29. K. S. Cole and R. H. Cole, J. Chem. Phys. 9, 341 (1941). 10.1063/1.1750906
30. J. Sikula, V. Sedlakova, J. Hlavka, and Z. Sita, in CARTS EU (2006), pp. 189-196;
31. J. Sikula, V. Sedlakova, H. Navarova, J. Hlavka, M. Tacano, and Z. Sita, in CARTS USA (2007), pp. 337-345.