Dynamics of hydrogen sensing with Pt/TiO2 Schottky diodes

Applied Physics Letters

Volumn 103, Issue 3, 2013, Pages

  Cerchez, M ^a   Langer, H ^a   El Achhab, M ^a   Heinzel, T ^a   Ostermann, D ^b   Luder H ^b   Degenhardt, J ^b  

^a HEINRICH HEINE UNIVERSITY   (Germany)

^b ODB Tec GmbH Co KG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUILT-IN VOLTAGE; CAPACITANCE VOLTAGE CHARACTERISTIC; DOPING DENSITIES; ELECTRONIC TRANSPORT MEASUREMENTS; HYDROGEN-SENSING; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY DIODES;

HYDROGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84881525209     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816265     Document Type: Article

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