Thin film morphology control via a mixed solvent system for high-performance organic thin film transistors

Science of Advanced Materials

Volumn 5, Issue 9, 2013, Pages 1323-1327

  An, Tae Kyu ^a   Park, So Min ^b   Nam, Sooji ^a   Hwang, Jaeyeong ^b   Yoo, Seung Jin ^b   Lee, Min Jung ^b   Yun, Won Min ^a   Jang, Jaeyoung ^a   Cha, Hyojung ^a   Hwang, Jihun ^a   Park, Seonuk ^a   Kim, Jiye ^a   Chung, Dae Sung ^c   Kim, Yun Hi ^b   Kwon, Soon Ki ^b   Park, Chan Eon ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Gyeongsang National University   (South Korea)

^c Chung Ang University   (South Korea)

Author keywords

Crystallinity; Fused acene; Mixed solvent; Morphology; Organic semiconductor; Organic thin film transistor (OTFT)

Indexed keywords

EID: 84880933923     PISSN: 19472935     EISSN: 19472943     Source Type: Journal    
DOI: 10.1166/sam.2013.1566     Document Type: Article

References (26)

1. H. Tian, Y. Han, C. Bao, D. Yan, Y. Geng, and F. Wang, Chem. Commun. 48, 3557 (2012);
2. Y. Qiao, Y. Guo, C. Yu, F. Zhang, W. Xu, Y. Liu, and D. Zhu, J. Am. Chem. Soc. 134, 4084 (2012);
3. M. He, J. Ge, Z. Lin, X. Feng, X. Wang, H. Lu, Y. Yang, and F. Qiu, Energy Environ. Sci. 5, 8351 (2012);
4. M. He, W. Han, J. Ge, Y. Yang, F. Qiu, and Z. Lin, Energy Environ. Sci. 4, 2894 (2011);
5. M. He, J. Jung, F. Qiu, and Z. Lin, J. Mater. Chem. 22, 24254 (2012).
6. T. W. Kelley, P. F. Baude, C. Gerlach, D. E. Ender, D. Muyres, M. A. Haase, D. E. Vogel, and S. D. Theiss, Chem. Mater. 16, 4413 (2004).
7. M. Bendikov, F. Wudl, and D. F. Perepichka, Chem. Rev. 113, 1069 (2001).
8. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. 14, 99 (2002).
9. J. Zhang, G. Wu, C. He, D. Deng, and Y. Li, J. Mater. Chem. 21, 3768 (2011).
10. Y.-H. Kim, Y. U. Lee, J.-I. Han, S.-M. Han, and M.-K. Han. J. Elec-trochem. Soc. 154, H995 (2007).
11. G. Horowitz, Synth. Met. 138, 101 (2003).
12. K. Xiao, Y. Liu, T. Qi, W. Zhang, F. Wang, J. Gao, W. Qiu, Y. Ma, G. Cui, S. Chen, X. Zhan, G. Yu, J. Qin, W. Hu, and D. Zhu, J. Am. Chem. Soc. 127, 13281 (2005);
13. R. J. Kline, D. M. DeLongchamp, D. A. Fischer, E. K. Lin, M. Heeney, I. McCulloch, and M. F. Toney, Appl. Phys. Lett. 90, 062117 (2007).
14. M. Mushrush, A. Facchetti, M Lefenfeld, H. E. Katz, and T. J. Marks, J. Am. Chem. Soc. 125, 9414 (2003).
15. H. Yan, Z. Chen, Y. Zheng, C. Newman, J. R. Quinn, F. Dotz, M. Kastler, and A. Facchetti, Nature 457, 679 (2009).
16. S.-O. Kim, T. K. An, J. Chen, I. Kang, S. H. Kang, D. S. Chung, C. E. Park, Y.-H. Kim, and S.-K. Kwon, Adv. Funct. Mater. 21, 1616 (2011).
17. M. H. Choi, S. H. Han, S. H. Lee, D. J. Choo, J. Jang, and S. K. Kwon, Org. Electron. 10, 421 (2009).
18. J. A. Lim, J.-H. Kim, L. Qiu, W. H. Lee, H. S. Lee, D. Kwak, and K. Cho, Adv. Funct. Mater. 20, 3292 (2010).
19. E. Paul, H.-H. Tung, and M. Midler, Powder Technol. 150, 133 (2005).
20. K. Shin, S. Y. Yang, C. Yang, H. Jeon, and C. E. Park, Org. Electron. 8, 336 (2007).
21. P. C. Chang, J. Lee, D. Huang, V. Subramanian, A. R. Murphy, and J. M. J. Frechet, Chem. Mater. 16, 4783 (2004).
22. S. Nam, J. Jang, H. Cha, J. Hwang, T. K. An, S. Park, and C. E. Park, J. Mater. Chem. 22, 5543 (2012);
23. J.-F. Chang, B. Sun, D. Breiby, M. M. Nielsen, T. I. Solling, M. Giles, I. McCulloch, and H. Sirringhaus, Chem. Mater. 16, 4772 (2004).
24. S. Nam, D. S. Chung, J. Jang, S. H. Kim, C. Yang, S.-K. Kwon and C. E. Park, J. Electrochem. Soc. 157, H90 (2010);
25. W.-Y. Lee, K.-F. Cheng, C.-L. Liu, S.-T. Lin, Chu. C. Chueh, F.-Y. Tsai, and W.-C. Chen, J. Polym. Res. 16, 239 (2009).
26. C. Yang, Y. Kwack, S. H. Kim, T. K. An, K. Hong, S. Nam, M. Park, W.-S. Choi, and C. E. Park, Org. Electron. 12, 411 (2011).