Environmentally clean slurry using nano-TiO 2 -abrasive mixed with oxidizer H 2 O 2 for ruthenium-film chemical mechanical planarization

Applied Surface Science

Volumn 282, Issue , 2013, Pages 844-850

  Cui, Hao ^a   Park, Jin Hyung ^a   Park, Jea Gun ^a  

^a Hanyang University   (South Korea)

Author keywords

Chemical mechanical polishing; Ruthenium

Indexed keywords

ABRASIVES; CORROSION; POLISHING; RUTHENIUM; SILICA; TITANIUM DIOXIDE;

ADSORBED AMOUNT; CMP MECHANISM; COLLOIDAL SILICA; ENVIRONMENTAL PROBLEMS; IONIC CONTAMINATION; POLISHING RATE; RUTHENIUM FILMS; SEMICONDUCTOR CHIPS;

CHEMICAL MECHANICAL POLISHING;

EID: 84880932300     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.06.068     Document Type: Article

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