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Nanoscale

Volumn 5, Issue 8, 2013, Pages 3266-3271

Formation of silicon nanoparticles by a pressure induced nucleation mechanism

(3) Kang, Myung Koo a Kim, Si Joon b Kim, Hyun Jae b

a SAMSUNG Electronics (South Korea)

b Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

C. THIN FILM TRANSISTOR (TFT); CONTROLLABLE SIZE; DENSITY DIFFERENCE; EXCIMER LASER CRYSTALLIZATION; INDUCED NUCLEATION; LASER ENERGY DENSITY; POLYCRYSTALLINE-SI; SILICON NANOPARTICLES;

EXCIMER LASERS; GRAIN SIZE AND SHAPE; LIQUIDS; NANOPARTICLES; NUCLEATION; SILICON; SILICON OXIDES; THIN FILM TRANSISTORS; THIN FILMS;

AMORPHOUS SILICON;

EID: 84880909758 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr34178j Document Type: Article

Times cited : (7)

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