Electroluminescence from silicon nanoparticles fabricated from the gas phase

Nanotechnology

Volumn 21, Issue 45, 2010, Pages

  Theis, Jens ^a   Geller, Martin ^a   Lorke, Axel ^a   Wiggers, Hartmut ^a   Wieck, Andreas ^b   Meier, Cedrik ^c  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL INJECTION; ELECTROLUMINESCENCE INTENSITY; GAAS SUBSTRATES; GAS-PHASE SYNTHESIS; GASPHASE; II-IV SEMICONDUCTORS; INDIUM TIN OXIDE; LOW THRESHOLD VOLTAGE; N-DOPED; SI NANOPARTICLES; SILICON NANOPARTICLES;

ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GASES; INDIUM COMPOUNDS; IONIZATION OF GASES; NANOPARTICLES; OPTICAL PROPERTIES; SEMICONDUCTING SILICON; TIN; TIN OXIDES; TITANIUM COMPOUNDS; VANADIUM;

IMPACT IONIZATION;

EID: 77958562326     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/45/455201     Document Type: Article

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