Preparation of narrow band-gap Cu2Sn(S,Se)3 and fabrication of film by non-vacuum process

Japanese Journal of Applied Physics

Volumn 52, Issue 4 PART 2, 2013, Pages

  Nomura, Takeshi ^a   Maeda, Tsuyoshi ^a   Wada, Takahiro ^a  

^a RYUKOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER MATERIAL; DIFFUSE REFLECTANCE SPECTRUM; HIGH PRESSURE SINTERING; MONOCLINIC CRYSTAL SYSTEMS; NONVACUUM PROCESS; POWDER X RAY DIFFRACTION; THIN FILM FABRICATION; TRANSMITTANCE SPECTRA;

ENERGY GAP; FABRICATION; POWDERS; RIETVELD REFINEMENT; SINTERING; SOLID SOLUTIONS; SOLID STATE DEVICES; TIN; VACUUM; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84880833635     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.04CR08     Document Type: Conference Paper

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