Ternary and multinary Cu-chalcogenide photovoltaic materials from CuInSe 2 to Cu 2ZnSnS 4 and other compounds

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 5, 2012, Pages 520-525

  Wada, Takahiro ^a   Nakamura, Satoshi ^a   Maeda, Tsuyoshi ^a  

^a RYUKOKU UNIVERSITY   (Japan)

Author keywords

CIS; Cu 2SnSe 3; Cu 2ZnSnSe 4; Cu 2SnS 3; Cu 2ZnSnS 4; CuInSe 2; CZTS

Indexed keywords

ABSORBER MATERIAL; CHALCOGENS; CHEMICAL BONDINGS; CIS; CIS THIN FILMS; CUINSE 2; CZTS; DEPOSITION PROCESS; HIGH QUALITY; II-VI COMPOUNDS; ORBITALS; P TYPE SEMICONDUCTOR; PHOTOVOLTAIC MATERIALS; STRUCTURE CHARACTERISTIC; THIN-FILM SOLAR CELLS; THREE-STAGE PROCESS; VALENCE-BAND MAXIMUMS;

CHALCOGENIDES; CHEMICAL BONDS; COPPER COMPOUNDS; DEPOSITION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; THIN FILMS; TIN; VALENCE BANDS; VAPOR DEPOSITION;

COPPER;

EID: 84864480406     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2183     Document Type: Article

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