Effect of annealing temperature and CuO on microstructure and optical band gap of CuxZn1-xO thin films

Superlattices and Microstructures

Volumn 61, Issue , 2013, Pages 115-123

  Lv, Jianguo ^a,b,c   Zhou, Zhitao ^b   Wang, Feng ^b   Liu, Changlong ^b   Gong, Wanbing ^b   Dai, Jielin ^b   Chen, Xiaoshuang ^a   He, Gang ^c   Shi, Shiwei ^c   Song, Xueping ^c   Sun, Zhaoqi ^c   Liu, Feng ^d  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b HEFEI NORMAL UNIVERSITY   (China)

^c ANHUI UNIVERSITY   (China)

^d ANHUI POLYTECHNIC UNIVERSITY   (China)

Author keywords

CuxZn1 xO; Optical band gap; Photoluminescence; Sol gel; Thin films

Indexed keywords

ABSORPTION CO-EFFICIENT; ANNEALING TEMPERATURES; C-AXIS ORIENTATIONS; DEEP LEVEL EMISSION; EFFECT OF ANNEALING; FLUORESCENCE SPECTROMETERS; INTERSTITIAL DEFECTS; UV-VIS SPECTROPHOTOMETERS;

ANNEALING; ELECTRON TRANSITIONS; MICROSTRUCTURE; OPTICAL BAND GAPS; PHOTOLUMINESCENCE; SOL-GEL PROCESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ZINC;

EID: 84880339744     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2013.06.010     Document Type: Article

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