Ab initio electronic gaps of Ge nanodots: The role of self-energy effects

Journal of Physical Chemistry C

Volumn 117, Issue 27, 2013, Pages 14229-14234

  Marsili, Margherita ^a   Botti, Silvana ^b,c,g   Palummo, Maurizia ^d,g   Degoli, Elena ^e,g   Pulci, Olivia ^d,g   Weissker, Hans Christian ^f,g   Marques, Miguel A L ^c,g   Ossicini, Stefano ^e,g   Del Sole, Rodolfo ^d,g  

^a UNIVERSITY OF PADOVA   (Italy)

^b LABORATOIRE DES SOLIDES IRRADIÉS   (France)

^c UNIVERSITÉ LYON 1   (France)

^d UNIVERSITY OF ROME TOR VERGATA   (Italy)

^e UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^f AIX MARSEILLE UNIVERSITÉ   (France)

^g European Theoretical Spectroscopy Facility ETSF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITED-STATE PROPERTIES; EXTENDED SYSTEMS; GERMANIUM NANOCRYSTALS; NANO-STRUCTURING; QUALITATIVE DIFFERENCES; RYDBERG CHARACTER; SELF-ENERGY EFFECTS; SILICON NANO STRUCTURES;

ELECTRONIC STRUCTURE; GERMANIUM; HYDROGENATION; NANOCRYSTALS; SILICON;

CALCULATIONS;

EID: 84880174537     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3121269     Document Type: Article

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