Design and fabrication of hydrogen sulfide (H2S) gas sensor using PtSi/porous n-Si Schottky diode

Sensors and Materials

Volumn 25, Issue 5, 2013, Pages 297-308

  Fard, Hossein Dehnavi ^a   Khatami, Saeid ^a   Izadi, Nosrat ^c   Koohsorkhi, Javad ^c   Rashidi, Alimorad ^b  

^a AMIRKABIR UNIVERSITY OF TECHNOLOGY   (Iran)

^b RESEARCH INSTITUTE OF PETROLEUM INDUSTRY RIPI   (Iran)

^c UNIVERSITY OF TEHRAN   (Iran)

Author keywords

Breakdown voltage; Coulomb blockade effect; Electric field; Gas sensor; Hydrogen sulfide; Porous silicon; Schottky diode; Single electron effect

Indexed keywords

COULOMB BLOCKADE EFFECTS; DETECTION OF H; GAS CONCENTRATION; ROOM TEMPERATURE; SCHOTTKY DIODES; SCHOTTKY JUNCTIONS; SI SUBSTRATES; SINGLE-ELECTRON EFFECTS;

ATMOSPHERIC PRESSURE; CHEMICAL SENSORS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GAS DETECTORS; HYDROGEN SULFIDE; PLATINUM; POROUS SILICON; SCHOTTKY BARRIER DIODES; SULFUR DETERMINATION;

SILICON;

EID: 84880105017     PISSN: 09144935     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. AIHA: Emergency Response Planning Guideline for Hydrogen Sulfide, American Industrial Hygiene Association Set 6 (Akron, 1991).
2. CARB: Air Toxics Emissions Data Collected in the Air, Toxics Hot Spots Program, CEIDARS Database (January 29, 1999).
3. R. S. Niranjan, K. R. Patil, S. R. Sainkar and I. S. Mulla: Mater. Chem. Phys. 80 (2003) 250.
4. T. Hoyodo: ECS Trans. 16 (2008) 317.
5. F. Raissi, M. S. Abrishamian and T. Emadi: IEEE Trans. Electron Devices 51 (2004) 339.
6. F. Raissi and M. M. Far: IEEE Sens. J. 2 (2002) 476.
7. F. Raissi, S. Mirzakuchaki, H. M. Jalili and A. Erfanian: IEEE Sens. J. 6 (2006) 146.
8. R. L. Smith and S. D. Collinsa: J. Appl. Phys. 71 (1992) R1.
9. S. Khatami, H. Akrami and A. Fattah: Defect and Diffusion Forum 316 (2011) 81.
10. H. Wei, H. Sun, S. Wang, G. Chen, Y. Hou, H. Guo and X. Ma: J. Nat. Gas Chem. 19 (2010) 393.