The effects of temperature on electrical transport properties of Al/Si Schottky diode

AIP Conference Proceedings

Volumn 1536, Issue , 2013, Pages 487-488

  Kumar, Rajender ^a   Chand, Subhash ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Barrier height; capacitance voltage characteristics; Current voltage characteristics; Ideality factor; Schottky diode

Indexed keywords

EID: 84880089249     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.4810313     Document Type: Conference Paper

References (5)

1. S. M. Sze SM 2002, Physics of Semiconductor Devices 2nd Edn (New York: Wiley).
2. S. Lin, B. P. Zhang, S. W. Zeng, X. M. Cai, J. Y. Zhang, S. X. Wu, A. K. Ling, G. E. Weng, Solid State Electronics63, 105(2011).
3. M. Soylua and F. Yakuphanoglu, Thin Solid Films 519, 1950(2011).
4. S. Chand and J. Kumar, Semicond. Sci. Technol. 10, 1680 (1995).
5. M. E. Audin, O. Gullu and N. Yildirim, Physica B. 403, 131(2008)