A study on characterization of Al/ZnS/p-Si/Al heterojunction diode synthesized by sol-gel technique

Materials Letters

Volumn 102-103, Issue , 2013, Pages 106-108

  Turgut, Güven ^a   Keskenler, E Fahri ^b   Aydin, Serdar ^a   Doǧan, Seydi ^c   Duman, Songül ^a   Sönmez, Erdal ^a   Esen, Bayram ^c   Düzgün, Bahattin ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b RECEP TAYYIP ERDOGAN UNIVERSITY   (Turkey)

^c BALIKESIR UNIVERSITY   (Turkey)

Author keywords

Atomic force microscopy; Contacts; Sol gel preparation; Thin films

Indexed keywords

ALUMINUM COATINGS; ATOMIC FORCE MICROSCOPY; CONTACTS (FLUID MECHANICS); ELECTRIC RECTIFIERS; ELECTRIC RESISTANCE; ENERGY GAP; FILM PREPARATION; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; THIN FILMS; ZINC SULFIDE;

DEVICE PERFORMANCE; ELECTRICAL STUDIES; HETEROJUNCTION DIODES; OPTICAL AND ELECTRICAL PROPERTIES; RECTIFICATION BEHAVIOR; SERIES RESISTANCE VALUES; SOL GEL PREPARATIONS; SOL-GEL SPIN COATING;

ALUMINUM COMPOUNDS;

EID: 84880080264     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2013.03.125     Document Type: Article

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