메뉴 건너뛰기




Volumn 34, Issue 7, 2013, Pages 900-902

Estimation and modeling of the full well capacity in pinned photodiode CMOS image sensors

Author keywords

Active pixel sensor (APS); charge transfer; CMOS Image Sensors (CIS); full well capacity; pinned photodiode (PPD); pinning voltage; semiconductor device modeling

Indexed keywords

ACTIVE PIXEL SENSOR; CMOS IMAGE SENSOR; FULL WELL CAPACITY; HANDLING CAPABILITY; OPERATING CONDITION; PHOTON FLUX; PINNED PHOTODIODES; TECHNICAL DOCUMENTATIONS;

EID: 84880076541     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2260523     Document Type: Article
Times cited : (49)

References (7)
  • 1
    • 41749086903 scopus 로고    scopus 로고
    • Negative offset operation of four-transistor CMOS image pixels for increased well capacity and suppressed dark current
    • DOI 10.1109/LED.2008.917812
    • B. Mheen, Y.-J. Song, and A. Theuwissen, "Negative offset operation of four-transistor CMOS image pixels for increased well capacity and suppressed dark current," IEEE Electron Device Lett., vol. 29, no. 4, pp. 347-349, Apr. 2008. (Pubitemid 351486779)
    • (2008) IEEE Electron Device Letters , vol.29 , Issue.4 , pp. 347-349
    • Mheen, B.1    Song, Y.-J.2    Theuwissen, A.J.P.3
  • 2
    • 84874649739 scopus 로고    scopus 로고
    • Feedforward effect in standard CMOS pinned photodiodes
    • Mar.
    • M. Sarkar, B. Buttgen, and A. Theuwissen, "Feedforward effect in standard CMOS pinned photodiodes," IEEE Trans. Electron Devices, vol. 60, no. 3, pp. 1154-1161, Mar. 2013.
    • (2013) IEEE Trans. Electron Devices , vol.60 , Issue.3 , pp. 1154-1161
    • Sarkar, M.1    Buttgen, B.2    Theuwissen, A.3
  • 4
    • 77954030724 scopus 로고    scopus 로고
    • Effects of negative-bias operation and optical stress on dark current in CMOS image sensors
    • Jul.
    • T. Watanabe, J.-H. Park, S. Aoyama, K. Isobe, and S. Kawahito, "Effects of negative-bias operation and optical stress on dark current in CMOS image sensors," IEEE Trans. Electron Devices, vol. 57, no. 7, pp. 1512-1518, Jul. 2010.
    • (2010) IEEE Trans. Electron Devices , vol.57 , Issue.7 , pp. 1512-1518
    • Watanabe, T.1    Park, J.-H.2    Aoyama, S.3    Isobe, K.4    Kawahito, S.5
  • 7
    • 84860542533 scopus 로고    scopus 로고
    • Analyzing the radiation degradation of 4-transistor deep submicron technology CMOS image sensors
    • Jun.
    • J. Tan, B. Buttgen, and A. Theuwissen, "Analyzing the radiation degradation of 4-transistor deep submicron technology CMOS image sensors," IEEE Sensors J., vol. 12, no. 6, pp. 2278-2286, Jun. 2012.
    • (2012) IEEE Sensors J. , vol.12 , Issue.6 , pp. 2278-2286
    • Tan, J.1    Buttgen, B.2    Theuwissen, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.