Enhancing mechanism of visible-light absorption for photovoltaic response and photoluminescence of Zn 2 SnO 4 with high solubility of Bi 3+

Applied Surface Science

Volumn 280, Issue , 2013, Pages 556-563

  Liu, Xiansheng ^a   Wang, Junqiao ^a   Liang, Erjun ^a   Zhang, Weifeng ^b  

^a ZHENGZHOU UNIVERSITY   (China)

^b HENAN UNIVERSITY   (China)

Author keywords

Codopant; Electron transition; Photoluminescence; Surface photovoltage

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON TRANSITIONS; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; LIGHT ABSORPTION; NANOPARTICLES; PHOTOLUMINESCENCE; SOLUBILITY; TIN COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS;

BUILT-IN ELECTRIC FIELDS; CO-DOPANTS; PHOTO-INDUCED CHARGE; PHOTOVOLTAIC RESPONSE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SURFACE PHOTOVOLTAGES; VISIBLE LIGHT ABSORPTION; X RAY PHOTOELECTRON SPECTRA;

LIGHT;

EID: 84879692202     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.05.026     Document Type: Article

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