Copper oxide phase content and its effect on the electric pulse induced resistive switching characteristics of CuxO resistive random access memory

Thin Solid Films

Volumn 539, Issue , 2013, Pages 337-341

  Ebrahim, Rabi ^a,b   Zomorrodian, Ali ^a,b   Wu, Naijuan ^a,b   Ignatiev, Alex ^a,b,c  

^a UNIVERSITY OF HOUSTON   (United States)

^b University of Houston   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Copper oxide; Electric pulse induced resistive switching; Oxide phase; Resistive random access memory

Indexed keywords

BIPOLAR RESISTANCE SWITCHING; ELECTRIC-PULSE-INDUCED RESISTANCE SWITCHING; ELECTRIC-PULSE-INDUCED RESISTIVE SWITCHING; OXIDE PHASE; QUANTITATIVE MEASUREMENT; RESISTIVE RANDOM-ACCESS MEMORY; RESISTIVE SWITCHING; SWITCHING PHENOMENON;

COPPER OXIDES; FILM GROWTH; NONVOLATILE STORAGE; SWITCHING; SWITCHING SYSTEMS;

COPPER;

EID: 84879413532     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.04.142     Document Type: Article

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