Performance improvement of CuxO resistive switching memory by surface modification

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 1015-1018

  Lv, Hangbing ^a   Tang, Tingao ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FORMING PROCESS; N2 ATMOSPHERES; PERFORMANCE IMPROVEMENTS; PLASMA OXIDATION; RESISTANCE SWITCHING; RESISTIVE SWITCHING MEMORIES; SWITCHING BEHAVIORS;

CONDUCTIVE FILMS;

COPPER;

EID: 79959347108     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6281-8     Document Type: Article

References (11)

1. C. Rohde, B.J. Choi, D.S. Jeong, S. Choi, J.S. Zhao, C.S. Hwang, Appl. Phys. Lett. 86, 262907 (2005).
2. A. Beck, J.G. Bednorz, Ch. Gerber, C. Rossel, D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
3. H.B. Lv, X.F. Fu, P. Zhou, Y.Y. Lin, T.A. Tang, IEEE Electron Device Lett. 29, 309 (2008).
4. S. Srivastava, N.K. Pandey, P. Padhan, R.C. Budhani, Phys. Rev. B 62, 21 (2000).
5. D. Adler, M.S. Shur, M. Silver, S.R. Ovshinsky, J. Appl. Phys. 51, 3289 (1980).
6. T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, C. Adachi, Appl. Phys. Lett. 83, 1252 (2003).
7. A. Chen, S. Haddad, Y.C. Wu, T.N. Fang, Z. Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. Van Buskirk, M. Taguchi, in Electron Devices Meeting, 2005. IEDM Tech. Digest. IEEE International (2005), p. 746.
8. R. Dong, D.S. Lee, W.F. Xiang, S.J. Oh, D.J. Seong, S.H. Heo, H.J. Choi, M.J. Kwon, S.N. Seo, M.B. Pyun, M. Hasan, H. Hwang, Appl. Phys. Lett. 90, 042107 (2007).
9. http://srdata.nist.gov/xps/Bind-e-spec-query.asp.
10. A.F. Wright, J.S. Nelson, J. Appl. Phys. 92, 5849 (2002).
11. H.B. Lv, M. Wang, H.J. Wan, Y.L. Song, W.J. Luo, P. Zhou, T.A. Tang, Y.Y. Lin, R. Huang, S. Song, J.G. Wu, H.M. Wu, M.H. Chi, Appl. Phys. Lett. 94, 213502 (2009).