Carrier-tunable magnetism of graphene with single-atom vacancy

Journal of Applied Physics

Volumn 113, Issue 21, 2013, Pages

  Lei, Shulai ^a   Li, Bin ^a   Kan, Erjun ^b   Huang, Jing ^a,c   Li, Qunxiang ^a   Yang, Jinlong ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c ANHUI JIANZHU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DOPING; CRITICAL TEMPERATURES; ELECTRON-DOPING; HOLE-DOPING; LOCAL MAGNETIC MOMENTS; SPIN-POLARIZED DENSITY FUNCTIONAL THEORY; THEORETICAL RESULT;

DENSITY FUNCTIONAL THEORY; MAGNETIC COUPLINGS; MAGNETIC MOMENTS;

GRAPHENE;

EID: 84879377369     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4809562     Document Type: Article

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