A defective graphene phase predicted to be a room temperature ferromagnetic semiconductor

New Journal of Physics

Volumn 10, Issue , 2008, Pages

  Pisani, L ^a   Montanari, B ^b   Harrison, N M ^a,c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; DANGLING BONDS; DEFECT DENSITY; DEFECTS; ENERGY GAP; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; ISOMERS; MAGNETIC COUPLINGS; MAGNETIC MATERIALS; MAGNETISM; MECHANISMS; PROBABILITY DENSITY FUNCTION; SEPARATION; SIZE SEPARATION; SOLIDS; SPIN DYNAMICS; TRANSPORT PROPERTIES;

(MIN ,MAX ,+) FUNCTIONS; (PL) PROPERTIES; CARBON ATOMS; COUPLING MECHANISMS; COUPLING STRENGTHS; DEFECT CONCENTRATIONS; DEFECT SEPARATION; DENSITY-FUNCTIONAL (DF); ELECTRON EFFECTIVE MASS; ELECTRON SYSTEMS; FERMI EDGE; FERROMAGNETIC GROUND STATES; FERROMAGNETIC SEMICONDUCTORS; GRAPHENE; GRAPHENE SHEETS; HYBRID EXCHANGE; MAGNETIC (CE); PERIODIC ARRAYS; ROOM-TEMPERATURE (RT); SPIN ASYMMETRY; SPIN DIRECTION; SPINTRONIC DEVICES; THEORETICAL CALCULATIONS;

DENSITY FUNCTIONAL THEORY;

EID: 46249106531     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/10/3/033002     Document Type: Article

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