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Volumn 23, Issue 24, 2013, Pages 3106-3114

An analytical model of reactive diffusion for transient electronics

(11) Li, Rui a Cheng, Huanyu b Su, Yewang b,c Hwang, Suk Won d Yin, Lan d Tao, Hu e Brenckle, Mark A e Kim, Dae Hyeong f Omenetto, Fiorenzo G e Rogers, John A d Huang, Yonggang b

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

b Northwestern University (United States)

c TSINGHUA UNIVERSITY (China)

d University of Illinois at Urbana Champaign (United States)

e Tufts University (United States)

f Seoul National University (South Korea)

Author keywords

analytical model; reactive diffusion; transient electronics

Indexed keywords

CONSTITUENT MATERIALS; DOUBLE-LAYERED STRUCTURE; ELECTRICAL RESISTANCES; ENVIRONMENTAL MONITOR; OTHER PROPERTIES; PHYSICAL CONSTANTS; REACTIVE DIFFUSION; TRANSIENT ELECTRONICS;

DIFFUSION; DISSOLUTION; MODELS;

ANALYTICAL MODELS;

EID: 84879207062 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201203088 Document Type: Article

Times cited : (79)

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