Low temperature boron doped diamond

Applied Physics Letters

Volumn 102, Issue 22, 2013, Pages

  Zeng, Hongjun ^a   Arumugam, Prabhu U ^a   Siddiqui, Shabnam ^a   Carlisle, John A ^a  

^a ADVANCED DIAMOND TECHNOLOGIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON DOPED DIAMOND; DEPOSITION TEMPERATURES; ELECTROCHEMICAL CHARACTERIZATIONS; LOW SURFACE ROUGHNESS; NANOCRYSTALLINE DIAMONDS; OPTICAL TECHNOLOGY; OVERALL CHARACTERISTICS; ULTRA-NANOCRYSTALLINE DIAMOND;

DOPING (ADDITIVES); ELECTROMECHANICAL DEVICES; MEMS; SURFACE ROUGHNESS; TEMPERATURE;

DIAMONDS;

EID: 84879114170     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4809671     Document Type: Article

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