C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities

Optics Letters

Volumn 38, Issue 11, 2013, Pages 1760-1762

  Purnawirman, ^a   Sun, J ^a   Adam, T N ^b   Leake, G ^b   Coolbaugh, D ^b   Bradley, J D B ^a   Hosseini, E Shah ^a   Watts, M R ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; FABRICATION PROCESS; IMMERSION LITHOGRAPHY; INVERTED RIDGE WAVEGUIDES; OPTICAL INTENSITIES; SILICON NITRIDE WAVEGUIDES; SILICON PHOTONICS; WAVEGUIDE LASERS;

ERBIUM; RIDGE WAVEGUIDES; SILICON NITRIDE; WAVEGUIDES;

PUMPING (LASER);

EID: 84878665208     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.38.001760     Document Type: Article

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