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Volumn 113, Issue 19, 2013, Pages

The role of surface states in modification of carrier transport in silicon nanowires

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; ELECTRICAL CONTACTS; ELECTROLESS CHEMICAL ETCHING; EXPONENTIAL DISTRIBUTIONS; MECHANICAL SUPPORT; SCHOTTKY EMISSION MODEL; SILICON NANOWIRES; SPACE-CHARGE-LIMITED CURRENT;

EID: 84878406541     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4805031     Document Type: Article
Times cited : (17)

References (31)
  • 13
    • 0033884519 scopus 로고    scopus 로고
    • 10.1023/A:1004787007579
    • S. Wu, F. Li, Y. Zhu, and J. Shen, J. Mater. Sci. 35, 2005-2008 (2000). 10.1023/A:1004787007579
    • (2000) J. Mater. Sci. , vol.35 , pp. 2005-2008
    • Wu, S.1    Li, F.2    Zhu, Y.3    Shen, J.4
  • 15
    • 84860341696 scopus 로고    scopus 로고
    • 10.1088/0957-4484/23/19/194006
    • F. Zhang, T. Song, and B. Sun, Nanotechnology 23, 194006 (2012). 10.1088/0957-4484/23/19/194006
    • (2012) Nanotechnology , vol.23 , pp. 194006
    • Zhang, F.1    Song, T.2    Sun, B.3
  • 21
    • 55149124428 scopus 로고    scopus 로고
    • 10.1063/1.3002297
    • H. J. Xu and X. J. Li, Appl. Phys. Lett. 93, 172105 (2008). 10.1063/1.3002297
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 172105
    • Xu, H.J.1    Li, X.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.