Laser cooling with rare-earth-doped direct band-gap semiconductors

Journal of the Optical Society of America B: Optical Physics

Volumn 30, Issue 5, 2013, Pages 1141-1147

  Nemova, Galina ^a   Kashyap, Raman ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

IONS; LASER COOLING; LASER EXCITATION; QUENCHING; YTTERBIUM;

BAND-GAP SEMICONDUCTORS; COOLING PROCESS; LASER COOLING OF SOLIDS; PHONON ABSORPTION; RADIATIVE RECOMBINATION; THERMAL QUENCHING; YTTERBIUM ION; YTTERBIUM-DOPED;

ABSORPTION COOLING;

EID: 84878385193     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.30.001141     Document Type: Article

References (24)

1. M. Eichhorn, "Quasi-three-level solid-state lasers in the near and mid infrared based on trivalent rare earth ions," Appl. Phys. B 93, 269-316 (2008).
2. M. Sheik-Bahae and R. I. Epstein, "Laser cooling of solids," Laser Photon. Rev. 3, 1-18 (2008).
3. G. Nemova and R. Kashyap, "Laser cooling of solids," Rep. Prog. Phys. 73, 086501 (2010).
4. N. Q. Vinh, N. N. Ha, and T. Gregorkiewicz, "Photonic properties of Er-doped crystalline silicon," Proc. IEEE 97, 1269-1283 (2009).
5. P. Pringsheim, "Zwei Bemerkungen über den Unterschied von Lumineszenz- und Temperaturstrahlung," Z. Phys. 57, 739-746 (1929).
6. R. I. Epstein, M. I. Buchwald, B. C. Edwards, T. R. Gosnell, and C. E. Mungan, "Observation of laser-induced fluorescent cooling of a solid," Nature 377, 500-503 (1995).
7. D. V. Seletskiy, S. D. Melgaard, S. Bigotta, A. Di Lieto, M. Tonelli, and M. Sheik-Bahae, "Laser cooling of solids to cryogenic temperatures," Nat. Photonics 4, 161-164 (2010).
8. J. B. Khurgin, "Role of bandtail states in laser cooling of semiconductors," Phys. Rev. B 77, 235206 (2008).
9. P. S. Whitney, K. Uwai, H. Nakagome, and K. Takahei, "Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 53, 2074-2076 (1988).
10. K. Takahei, A. Taguchi, H. Nakagome, K. Uwai, and P. S. Whitney, "Intra-4f-shell luminescence excitation and quenching mechanism of Yb in InP," J. Appl. Phys. 66, 4941-4946 (1989).
11. A. Taguchi, H. Nakagome, and K. Takahei, "Thermal quenching mechanism of Yb intra-4f-shell luminescence in lnP," J. Appl. Phys. 70, 5604-5607 (1991).
12. A. Taguchi, M. Taniguchi, and K. Takahei, "Direct verification of energy back transfer from Yb 4f-shell to InP host," Appl. Phys. Lett. 60, 965-967 (1992).
13. A. Taguchi, K. Takahei, and Y. Horikoshi, "Multiphonon-assisted enegy transfer between Yb 4f shell and InP host," J. Appl. Phys. 76, 7288-7295 (1994).
14. 3+ in InP," J. Appl. Phys. 77, 1523-1530 (1995).
15. M. A. J. Klik and T. Gregorkiewicz, "Optically induced deexcitation of rare-earth ions in a semiconductor matrix," Phys. Rev. Lett. 89, 227401 (2002).
16. M. Needels, M. Schluter, and M. Lannoo, "Erbium point defects in silicon," Phys. Rev. B 47, 15533-15536 (1993).
17. H. J. Lozykowski and A. K. Alshawa, "Kinetics and quenching mechanisms of photolurninescence in Yb-doped InP," J. Appl. Phys. 76, 4836-4846 (1994).
18. 3+ in epitaxial lnP:Yb layers," Appl. Phys. Lett. 52, 114-116 (1988).
19. B. K. Ridley, "Multiphonon, non-radiative transition rate for electrons in semiconductors and insulators," J. Phys. C 11, 2323-2341 (1978).
20. E. Gutsche, "Non-Condon approximations and the static approach in the theory of non-radiative multiphonon transitions," Phys. Status Solidi B 109, 583-597 (1982).
21. A. Taguchi and K. Takahei, "Band-edge-related luminescence due to the energy backtransfer in Yb-doped InP," J. Appl. Phys. 79, 3261-3266 (1996).
22. O. Semyonov, A. Subashiev, Z. Chen, and S. Luryi, "Radiation efficiency of heavily doped bulk n-InP semiconductor," J. Appl. Phys. 108, 013101 (2010).
23. X. Luo, M. D. Eisaman, and T. R. Gosnell, "Laser cooling of a solid by 21 K starting from room temperature," Opt. Lett. 23, 639-641 (1998).
24. H. Gauck, T. H. Gfroerer, M. J. Renn, E. A. Cornell, and K. A. Bertness, "External radiative quantum efficiency of 96% from a GaAs/GaInP heterostructure," Appl. Phys. A 64, 143-147 (1997).