Band-edge-related luminescence due to the energy backtransfer in Yb-doped InP

Journal of Applied Physics

Volumn 79, Issue 6, 1996, Pages 3261-3266

  Taguchi, Akihito ^a   Takahei, Kenichiro ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL EQUATIONS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ENERGY TRANSFER; INDIUM; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; THERMAL EFFECTS; YTTERBIUM;

BAND EDGE; ENERGY BACKTRANSFER; LUMINESCENCE INTENSITY; NONRADIATIVE MULTIPHONON TRANSITION PROCESS; RATE EQUATIONS; TIME DECAY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030109874     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361272     Document Type: Article

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