Radiation efficiency of heavily doped bulk n-InP semiconductor

Journal of Applied Physics

Volumn 108, Issue 1, 2010, Pages

  Semyonov, Oleg ^a   Subashiev, Arsen ^a   Chen, Zhichao ^a   Luryi, Serge ^a  

^a Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; DECAY TIME; DOPING LEVELS; HEAVILY DOPED; INP; INP WAFERS; MINORITY CARRIER; MOSS-BURSTEIN EFFECT; NONRADIATIVE PROCESS; PHOTON RECYCLING; RADIATION EFFICIENCY; ROOM TEMPERATURE; SURFACE RECOMBINATIONS; TEMPERATURE DEPENDENCE; TEMPORAL EVOLUTION; TIME-RESOLVED PHOTOLUMINESCENCE;

LUMINESCENCE;

DOPING (ADDITIVES);

EID: 77955197102     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3455874     Document Type: Article

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