1200 V 6 A high temperature SiC BJTs

International Conference and Exhibition on High Temperature Electronics 2010, HiTEC 2010

Volumn , Issue , 2010, Pages 160-166

  Lindgren, Anders ^a   Domeij, Martin ^a  

^a TranSiC AB   (Sweden)

Author keywords

BJT; High temperature transistor; SiC; SPICE; Switching

Indexed keywords

BJT; HIGH TEMPERATURE TRANSISTORS; PARASITIC CAPACITANCE; SERIES RESISTANCES; SIC; SILICON CARBIDES (SIC); SWITCHING BEHAVIORS; TEMPERATURE DEPENDENCE;

BIPOLAR TRANSISTORS; CAPACITANCE; ELECTRIC RESISTANCE; HIGH TEMPERATURE OPERATIONS; SILICON CARBIDE; SWITCHING;

SPICE;

EID: 84878224166     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. CESAT and fast switching", to be published in the Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM2009)
2. Y. Gao et. al., "Comparison of static and switching characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT,", IEEE Transactions on Industry Applications, Volume 44, No. 3, p. 887 (2008)
3. T. W. Franke, F. W. Fuchs, "Comparison of Switching and Conducting Performance of SiC-JFET and SiC-BJT with a State of the Art IGBT,", 2009 13th European Conference of Power Electronics and Applications, p 10 pp, 2009
4. J. Zhang, P. Alexandrov, T. Burke, J. H. Zhao, IEEE Electron Device Letters, Volume 27, No. 5, p. 368 (2006)
5. LTspice IV, SPICE simulation freeware, http://www.linear.com/designtools/ software/