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Volumn 535, Issue 1, 2013, Pages 148-153

Optimization of Se layer thickness in Mo/CuGa/In/Se precursor for the formation of Cu(InGa)Se2 by rapid thermal annealing

(6) Koo, Jaseok a Jeon, Soyoung a Oh, Misol a Cho, Hyun Il b Son, Changgil b Kim, Woo Kyoung a

a Yeungnam University (South Korea)

b Samsung SDI (South Korea)

Author keywords

Cu(InGa)Se2; High temperature X ray diffraction; Rapid thermal processing; Selenization

Indexed keywords

DC MAGNETRON SPUTTERING; EXTERNAL HEATING; HIGH TEMPERATURE; HIGH TEMPERATURE X-RAY DIFFRACTION; LAYER THICKNESS; RAPID THERMAL PROCESS; REACTION PATHWAYS; SELENIZATION;

COPPER COMPOUNDS; DEPOSITS; GALLIUM; GLASS; PHASE SEPARATION; RAPID THERMAL PROCESSING; SUPERCONDUCTING FILMS; X RAY DIFFRACTION ANALYSIS;

RAPID THERMAL ANNEALING;

EID: 84878201392 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.11.082 Document Type: Conference Paper

Times cited : (22)

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