Effect of oxygen vacancies on the electronic structure and transport properties of SrRuO3 thin films

Journal of Applied Physics

Volumn 113, Issue 17, 2013, Pages

  Lu, Wenlai ^a,b   He, Kaihua ^a   Song, Wendong ^b   Sun, Cheng Jun ^c   Chow, Gan Moog ^a   Chen, Jing Sheng ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVITY IMPROVEMENT; EFFECT OF OXYGEN; MICRO-STRUCTURAL; ORBITAL OVERLAP; ORBITALS; OXYGEN PARTIAL PRESSURE; PEROVSKITE OXIDES;

ELECTRONIC STRUCTURE; EPITAXIAL FILMS; OXYGEN VACANCIES;

TRANSPORT PROPERTIES;

EID: 84877777717     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795011     Document Type: Conference Paper

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