The influence of energetic bombardment on the structure and properties of epitaxial SrRuO3 thin films grown by pulsed laser deposition

Journal of Applied Physics

Volumn 83, Issue 8, 1998, Pages 4373-4379

  Maria, J P ^a   Trolier McKinstry, S ^a   Schlom, D G ^a   Hawley, M E ^b   Brown, G W ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001428444     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367195     Document Type: Article

References (35)

1. R. J. Bouchard and J. L. Gillson, Mater. Res, Bull. 7, 873 (1972).
2. X. D. Wu, S. R. Foltyn, R. C. Dye, Y. Coulter, and R. E. Muenchausen, Appl. Phys. Lett. 62, 2434 (1993).
3. C. B. Eom, R. J. Cava, R. M. Flemming, J. M. Phillips, R. V. van Dover, J. H. Marshall, J. W. P. Hsu, J. J. Krajewski, and J. W. F. Peck, Science 258, 1766 (1992).
4. C. W. Jones, P. D. Battle, P. Lightfoot, and W. T. A. Harrison, Acta Crystallogr., Sect. C: Cryst. Struct. Commun. 45, 365 (1989).
5. L. Mieville, T. H. Geballe, L. Antaonazza, and K. Char, Appl. Phys. Lett. 70, 126 (1997).
6. G. Cao, S. McCall, and J. E. Crow, Phys. Rev. B 55, R672 (1997).
7. A. Callaghan, C. W. Moeller, and R. Ward, J. Inor. Chem. 5, 1572 (1966).
8. Micro is a trademark of International Products Corporation, Burlington, NJ.
9. M. Kawasaki, K. Takahashi, T. Maeda, R. Tsuchia, M. Shinohara, O. Ishiyama, M. Yoshimoto, and H. Koinuma, Science 266, 1540 (1994).
10. PCI Ozone Corporation, West Caldwell, NJ.
11. Baratron is a trademark of MKS Instruments, Andover, MA.
12. Target Materials International, Columbus, OH.
13. B. D. Cullity, Elements of X-ray Diffraction (Addison-Wesley, Reading, 1978).
14. D. T. Rooney, J. B. Dixon, K. G. Schurr, and M. R. Northrup, Int. J. Micro. Elec. Pack. 20, (1997).
15. Alphastep 2000, Tencor Instruments, Mountain View, CA.
16. Pulsed Laser Deposition of Thin Films, edited by D. B. Chrisey and G. K. Hubler (Wiley, NY, 1994).
17. B. Holzapfel, B. Roas, L. Schultz, P. Bauer, and G. Saemann-Ischenko, Appl. Phys. Lett. 61, 3178 (1992).
18. A. Jukna, B. Vengalis, F. Anisimovas, and V. Jasutis, Vacuum Proceedings of the 4th European Vacuum Conference, Volume 46, Numbers 8-10 (1995), pp. 977,978.
19. D. Smith, Thin-Film Deposition (McGraw-Hill, New York, 1995).
20. Q. Gan, R. A. Rao, and C. B. Eom, Appl. Phys. Lett. 70, 1962 (1997).
21. E. J. Tarsa, E. A. Hachfeld, F. T. Quinlan, and J. S. Speck, Appl. Phys. Lett. 68, 490 (1996).
22. J.-P. Maria, M.S. thesis, The Pennsylvania State University, 1996 (unpublished).
23. J. K. Burdette, Chemical Bonding in Solids (Oxford University Press, New York, 1995).
24. M. Hiratani, C. Okazaki, K. Imagawa, and K. Takagi, Jpn. J. Appl. Phys., Part 1 33, 6212 (1996).
25. A. D. Marwick, G. J. Clark, K. N. Tu, D. S. Lee, U. N. Singh, J. Doyle, and J. J. Cuomo, Nucl. Instrum. Methods Phys. Res. B 40/41, 612 (1989).
26. L. Klein, J. S. Dodge, T. H. Geballe, A. Kapitulnik, A. F. Marshall, L. Antognazza, and K. Char, Appl. Phys. Lett. 66, 2427 (1995).
27. L. Klein, J. S. Dodge, C. H. Ahn, G. D. Snyder, T. H. Geballe, M. R. Beasley, and A. Kapitulnik, Phys. Rev. Lett. 77, 2774 (1996).
28. M. Shepard, G. Cao, S. McCall, F. Freibert, and J. E. Crow, J. Appl. Phys. 79, 4821 (1996).
29. M. Shikano, T. Huang, M. Itoh, and T. Nakamura, Solid State Commun. 90, 115 (1994).
30. J. J. Neumeier, A. L. Cornelius, and J. S. Schilling, Physica B 198, 324 (1993).
31. J.-P. Maria, S. Trolier-McKinstry, and D. G. Schlom, Proceedings of the 10th IEEE International Symposium on Applied Ferro. 1, 1996, pp. 333-337.
32. J. P. Zheng, Z. Q. Huang, D. T. Shaw, and H. S. Kwok, Appl. Phys. Lett. 54, 280 (1989).
33. H. Kurogi, Y. Yamagata, T. Ikegami, K. Ebihara, B. Y. Tong, and K. Kumamoto, Mater. Res. Soc. Symp. Proc. 433, 237 (1996).
34. P. Sigmund, Appl. Phys. Lett. 14, 114 (1969).
35. S. Wolf and R. N. Tauber, Silicon Processing far the VLSI Era: Vol. 1 (Lattice, Sunset Beach, 1986).