Doping-concentration-dependent hole mobility in a ReO3 doped organic semiconductor of 4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino) -triphenylamine

Applied Physics Letters

Volumn 102, Issue 18, 2013, Pages

  Yoo, Seung Jun ^a   Lee, Jeong Hwan ^a   Lee, Jae Hyun ^b   Kim, Jang Joo ^a  

^a Seoul National University   (South Korea)

^b Hanbat National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE-CARRIER MOBILITY; DENSITY-OF-STATES; DOPING CONCENTRATION; EFFECT OF DOPING; INJECTED CARRIERS; NEGATIVELY CHARGED; ORGANIC SYSTEMS; TRIPHENYL AMINES;

ACTIVATION ENERGY; ELECTRIC FIELDS; HOLE MOBILITY; PHOSPHORUS;

DOPING (ADDITIVES);

EID: 84877767755     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804141     Document Type: Article

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