Highly efficient p-i-n and tandem organic light-emitting devices using an air-stable and low-temperature-evaporable metal azide as an n-dopant

Advanced Functional Materials

Volumn 20, Issue 11, 2010, Pages 1797-1802

  Yook, Kyoung Soo ^a   Jeon, Soon Ok ^a   Min, Sung Yong ^b   Lee, Jun Yeob ^a   Yang, Ha Jin ^c   Noh, Taeyong ^c   Kang, Sung Kee ^c   Lee, Tae Woo ^b  

^a Dankook University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AIR STABILITY; AIR-STABLE; CAPACITANCE VOLTAGE MEASUREMENTS; CESIUM AZIDE; CHARGE-INJECTION MECHANISMS; DEVICE PERFORMANCE; DRIVING VOLTAGES; ELECTRON TRANSPORT LAYERS; ELECTRON TRANSPORTING MATERIALS; EVAPORATION TEMPERATURE; HIGH-POWER; INORGANIC LAYERS; LOW DEPOSITION TEMPERATURE; LOW TEMPERATURES; MATERIAL HANDLING; N-DOPING; N-TYPE LAYERS; ORGANIC LIGHT-EMITTING DEVICES; ORGANIC MATERIALS; ORGANIC MOLECULAR BEAM DEPOSITION; P-TYPE; TRANSIENT ELECTROLUMINESCENCE; VACUUM DEPOSITION PROCESS;

CESIUM; CHEMICAL MODIFICATION; EVAPORATION; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MATERIALS HANDLING; ORGANIC LIGHT EMITTING DIODES (OLED);

DOPING (ADDITIVES);

EID: 77953007242     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201000137     Document Type: Article

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