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Angewandte Chemie - International Edition

Volumn 52, Issue 19, 2013, Pages 5052-5055

Insights into the energy levels of semiconductor nanocrystals by a dopant approach

(4) Zhang, Zhuolei a Li, Dongze a Xie, Renguo a Yang, Wensheng a

a JILIN UNIVERSITY (China)

Author keywords

band gap; dopants; energy levels; nanocrystals; photoluminescence

Indexed keywords

BUILDING BLOCKES; NANO-DEVICES; RATIONAL DESIGN; SEMICONDUCTOR NANOCRYSTALS;

ELECTRON ENERGY LEVELS; ENERGY GAP; METAL IONS; NANOCRYSTALS; PHOTOLUMINESCENCE;

DOPING (ADDITIVES);

EID: 84877711955 PISSN: 14337851 EISSN: 15213773 Source Type: Journal
DOI: 10.1002/anie.201210080 Document Type: Article

Times cited : (19)

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